Name: TSM085NB03CV-RGG
Brand: Taiwan Semiconductor Corporation
SKU: TSM085NB03CV RGG
Availability: InStock
Rating: 5 (73 reviews)

TSM085NB03CV-RGG

Per Riferimento Soltanto

Numero di parte	TSM085NB03CV-RGG
Produttore	Taiwan Semiconductor Corporation
Descrizione	30V, 58A, SINGLE N-CHANNEL POWER
Scheda dati
pacchetto	-
ECAD
A magazzino	30.000 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 4 - lug 9 (Scegli una spedizione rapida)
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Specifiche TSM085NB03CV-RGG

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	11A (Ta), 58A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1101 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	1.92W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs	8.5mOhm @ 11A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-PDFN (3.15x3.1)
Pacchetto / caso	8-PowerWDFN

TSM085NB03CV-RGG Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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TSM085NB03CV-RGG

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